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MRF9200LR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF9200LR3 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 12 page 2 RF Device Data Freescale Semiconductor MRF9200LR3 MRF9200LSR3 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) B (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 1.5 2.7 3.5 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 2400 mAdc) VGS(Q) 3 3.7 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 6.0 Adc) VDS(on) — 0.25 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6.7 Adc) gfs — 8.8 — S Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.5 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. N-CDMA, f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 16 17.5 — dB Drain Efficiency ηD 22 25 — % Adjacent Channel Power Ratio ACPR — -46.5 -45 dBc Input Return Loss IRL — -13 -9 dB 1. Part internally matched both on input and output. |
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