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IRFS4321PBF Datasheet(PDF) 3 Page - International Rectifier

Part No. IRFS4321PBF
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFS_SL4321PbF
www.irf.com
3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
VDS = 25V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ID = 50A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20406080
100
120
QG Total Gate Charge (nC)
0
4
8
12
16
20
VDS= 120V
VDS= 75V
VDS= 30V
ID= 50A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
≤ 60µs PULSE WIDTH
Tj = 25°C
5.0V
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
≤ 60µs PULSE WIDTH
Tj = 175°C
5.0V
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V




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