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IRFS4321PBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFS4321PBF
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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6/23/06
PD - 97105
www.irf.com
1
HEXFET® Power MOSFET
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
S
D
G
GD
S
Gate
Drain
Source
D2Pak
IRFS4321PbF
TO-262
IRFSL4321PbF
S
D
G
D
S
D
G
D
IRFS4321PbF
IRFSL4321PbF
VDSS
150V
RDS(on) typ.
12m
:
max.
15m
:
ID
83A
c
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes
 through … are on page 2
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
g
–––
0.45*
°C/W
RθJA
Junction-to-Ambient
g
–––
40
330
Max.
83
c
59
330
-55 to + 175
2.2
300
±30
120




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