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STD40NF3LL Datasheet(PDF) 3 Page - STMicroelectronics |
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STD40NF3LL Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 13 page STD40NF3LL Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDGR Drain-gate voltage (RGS = 20 kΩ)30 V VGS Gate- source voltage ± 16 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25°C 40 A ID Drain current (continuous) at TC = 100°C 28 A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 160 A Ptot Total dissipation at TC = 25°C 80 W Derating Factor 0.53 W/°C dv/dt (3) 3. ISD ≤40A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 5.5 V/ns EAS (4) 4. Starting Tj = 25 °C, ID = 20A, VDD = 25V Single pulse avalanche energy 850 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.88 °C/W Rthj-amb Thermal resistance junction-ambient max 100 °C/W TJ Maximum lead temperature for soldering purpose 300 °C |
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