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STF817A Datasheet(PDF) 3 Page - STMicroelectronics |
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STF817A Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 9 page STF817A - STN817A 2 Electrical characteristics 3/9 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. On/off states (1) Device mounted on a PCB area of 1 cm² (2) Pulsed: Pulse duartion = 300µs, duty cycle 1.5% Symbol Parameter Test Conditions Min. Typ. Max. Unit IECS Collector Cut-off Current (VBE=0) VCE = -80 V -500 µA ICEO Collector Cut-off Current (IB=0) VCE = -80 V -1 mA IEBO Emitter Cut-off Current (IC = 0) VEB = -5V -100 µA VCEO(sus) Note 2 Collector-Emitter Sustaining Voltage (IB = 0) IC=-10mA -80 V VCE(sat) Note 2 Collector-Emitter Saturation Volatge IC= -100 mA, IB= -10m A IC= -1 A, IB= -100m A -0.25 -0.5 V V VBE(sat) Note 2 Base-Emitter Saturation Volatge IC= -100 mA, IB= -10m A IC= -1 A, IB= -100m A -1 -1.1 V V hFENote 2 DC Current Gain IC= -100 mA, VCE = -2V IC= -500 mA, VCE = -2V IC= -1A, VCE = -2V 140 80 30 fT Transition Frequency IC= -0.1A, VCE = -10V 50 MHz |
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