MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21869/-A

TRANSFER-MOLD TYPE

INSULATED TYPE

Jul. 2003

2.00

2.10

2.20

1.90

—

0.60

2.60

0.90

1

10

1.42

2.00

mA

V

°C

°C

°C

°C

Condition

Symbol

Parameter

Limits

Inverter IGBT part (per 1/6 module)

Inverter FWDi part (per 1/6 module)

Min.

THERMAL RESISTANCE

Typ.

Max.

—

—

—

—

Unit

Condition

Symbol

Parameter

Limits

Min.

Typ.

Max.

—

—

—

0.70

—

—

—

—

—

—

Unit

°C, unless otherwise noted)

INVERTER PART

Collector-emitter saturation

voltage

FWDi forward voltage

Junction to case thermal

resistance

(Note 3)

Switching times

Inductive load (upper-lower arm)

Collector-emitter cut-off

current

1.50

1.60

1.70

1.30

0.30

0.40

2.00

0.65

—

—

V

µs

µs

µs

µs

µs

°C/W

°C/W

CONTROL (PROTECTION) PART

Note 4 : Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC trip-

level is less than 85 A.

5: Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulse-

Symbol

Parameter

Condition

Limits

Unit

Circuit current

Fault output voltage

Short circuit trip level

Supply circuit under-voltage

protection

Fault output pulse width

ON threshold voltage

OFF threshold voltage

Ω

(Note 4)

Trip level

Reset level

Trip level

Reset level

(Note 5)

—

—

—

—

4.9

—

0.43

1.0

10.0

10.5

10.3

10.8

1.0

2.1

0.8

—

—

—

—

—

—

0.48

1.5

—

—

—

—

1.8

2.3

1.4

5.00

0.40

7.00

0.55

—

0.95

0.53

2.0

12.0

12.5

12.5

13.0

—

2.6

2.1

Min.

Typ.

Max.

mA

mA

mA

mA

V

V

V

mA

V

V

V

V

ms

V

V

≤ 125°C

Note 3: Grease with good thermal conductivity should be applied evenly with about +100

µm~+200µm on the contacting surface of DIP-IPM

and heat-sink.

Input current