IRF510 datasheet(4/7 Pages) HARRIS

Part #	IRF510

Description	4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

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Manufacturer	HARRIS [Harris Corporation]

Direct Link	http://www.harris.com

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4 / 7 page

5-4

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

TC, CASE TEMPERATURE (

oC)

25

50

75

100

125

150

175

0

0.2

0.4

0.6

0.8

1.0

1.2

TC, CASE TEMPERATURE (

oC)

50

75

100

150

25

175

10

8

6

0

4

IRF510, IRF511

2

IRF512, IRF513

125

10

1

0.1

0.01

10-2

10-5

10-4

10-3

0.1

1

10

SINGLE PULSE

t1, RECTANGULAR PULSE DURATION (S)

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x Z

θJC + TC

t2

PDM

t1

NOTES:

0.01

0.02

0.5

0.2

0.1

0.05

100

10

1

103

110

102

0.1

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS

REGION IS LIMITED

BY rDS(ON)

TC = 25

oC

IRF510, 1

10

µs

IRF512, 3

IRF510, 1

IRF512.3

100

µs

1ms

DC

IRF511, 3

IRF510, 2

TJ = 175

oC

SINGLE PULSE

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

20

30

40

050

10

8

6

0

4

VGS = 10V

VGS = 8V

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

80

µs PULSE TEST

2

IRF510, IRF511, IRF512, IRF513

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