2N6395 datasheet(1/5 Pages) ONSEMI

Part #	2N6395

Description	Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS

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Manufacturer	ONSEMI [ON Semiconductor]

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August, 2006 − Rev. 6

1

Publication Order Number:

2N6394/D

2N6394 Series

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supplies.

Features

• Glass Passivated Junctions with Center Gate Geometry for Greater

Parameter Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 V

• Pb−Free Packages are Available*

MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

2N6394

2N6395

2N6397

2N6399

VDRM,

VRRM

50

100

400

800

V

On-State RMS Current

(180

° Conduction Angles; TC = 90°C)

IT(RMS)

12

A

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C)

ITSM

100

A

Circuit Fusing (t = 8.3 ms)

I2t

40

A2s

Forward Peak Gate Power

(Pulse Width

≤ 1.0 ms, TC = 90°C)

PGM

20

W

Forward Average Gate Power

(t = 8.3 ms, TC = 90°C)

PG(AV)

0.5

W

Forward Peak Gate Current

(Pulse Width

≤ 1.0 ms, TC = 90°C)

IGM

2.0

A

Operating Junction Temperature Range

TJ

−40 to +125

°C

Storage Temperature Range

Tstg

−40 to +150

°C

MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted)

Rating

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

2.0

°C/W

Maximum Lead Temperature for Soldering

Purposes 1/8

″ from Case for 10 Seconds

TL

260

°C

†Indicates JEDEC Registered Data

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

SCRs

12 AMPERES RMS

50 thru 800 VOLTS

K

G

A

Preferred devices are recommended choices for future use

and best overall value.

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

TO−220AB

CASE 221A

STYLE 3

1

2

3

4

2N639x = Device Code

x = 4, 5, 7, or 9

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MARKING

DIAGRAM

2N639xG

AYWW

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