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STX13005 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STX13005
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STX13005
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Table 3: Thermal Data
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
* Pulsed: Pulsed duration = 300 ms, duty cycle
≤ 1.5 %.
Tstg
Storage Temperature
-65 to 150
°C
TJ
Max. Operating Junction Temperature
150
°C
Symbol
Parameter
Value
Unit
Symbol
Parameter
Unit
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-ambient
Max
44.6
150
oC/W
oC/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off Current
(VBE = 0)
VCE = 700 V
VCE = 700 V
Tj = 125 oC
1
5
mA
mA
ICEO
Collector Cut-off Current
(IB = 0 )
VCE = 400 V
1
mA
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0 )
IE = 10 mA
L = 25 mH
9
18
V
VCE(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0 )
IC = 10 mA
400
V
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 1 A
IB = 200 mA
IC = 2 A
IB = 500 mA
IC = 3 A
IB = 750 mA
0.5
0.6
5
V
V
V
VBE(sat)* Base-Emitter
Saturation Voltage
IC = 1 A
IB = 200 mA
IC = 2 A
IB = 500 mA
1.2
1.6
V
V
hFE*
DC Current Gain
IC = 1 A
VCE = 5 V
IC = 2 A
VCE = 5 V
10
8
30
24
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
IC = 2 A
VCC = 125 V
IB1 = - IB2 = 400 mA
tp = 30 µs
(see figure 16)
1.65
260
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1 A
VClamp = 300 V
IB1 = 200 mA
VBE(off) = -5 V
L = 50 mH
RBB = 0
(see figure 15)
0.8
150
µs
ns




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