Electronic Components Datasheet Search |
|
BUK552-100B Datasheet(PDF) 2 Page - NXP Semiconductors |
|
BUK552-100B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 100 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1.0 1.5 2.0 V I DSS Zero gate voltage drain current V DS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA I DSS Zero gate voltage drain current V DS = 100 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±15 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 5 V; BUK552-100A - 0.25 0.28 Ω resistance I D = 5.5 A BUK552-100B - 0.3 0.35 Ω DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 5.5 A 4.5 6 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 400 600 pF C oss Output capacitance - 90 120 pF C rss Feedback capacitance - 35 50 pF t d on Turn-on delay time V DD = 30 V; ID = 3 A; - 12 18 ns t r Turn-on rise time V GS = 5 V; RGS = 50 Ω; - 45 70 ns t d off Turn-off delay time R gen = 50 Ω - 5070ns t f Turn-off fall time - 30 45 ns L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 10 A current I DRM Pulsed reverse drain current - - - 40 A V SD Diode forward voltage I F = 10 A ; VGS = 0 V - 1.2 1.5 V t rr Reverse recovery time I F = 10 A; -dIF/dt = 100 A/µs; - 90 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.35 - µC AVALANCHE LIMITING VALUE T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 10 A ; VDD ≤ 50 V ; - - 30 mJ unclamped inductive turn-off V GS = 5 V ; RGS = 50 Ω energy April 1993 2 Rev 1.100 |
Similar Part No. - BUK552-100B |
|
Similar Description - BUK552-100B |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |