BUK552-100B datasheet(2/7 Pages) PHILIPS

Part #	BUK552-100B

Description	PowerMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product Specification

PowerMOS transistor

BUK552-100A/B

Logic level FET

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

100

-

V

voltage

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

1.0

1.5

2.0

V

I

DSS

Zero gate voltage drain current

V

DS = 100 V; VGS = 0 V; Tj = 25 ˚C

-

1

10

µA

I

DSS

Zero gate voltage drain current

V

DS = 100 V; VGS = 0 V; Tj =125 ˚C

-

0.1

1.0

mA

I

GSS

Gate source leakage current

V

GS = ±15 V; VDS = 0 V

-

10

100

nA

R

DS(ON)

Drain-source on-state

V

GS = 5 V;

BUK552-100A

-

0.25

0.28

Ω

resistance

I

D = 5.5 A

BUK552-100B

-

0.3

0.35

Ω

DYNAMIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 25 V; ID = 5.5 A

4.5

6

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

400

600

pF

C

oss

Output capacitance

-

90

120

pF

C

rss

Feedback capacitance

-

35

50

pF

t

d on

Turn-on delay time

V

DD = 30 V; ID = 3 A;

-

12

18

ns

t

r

Turn-on rise time

V

GS = 5 V; RGS = 50 Ω;

-

45

70

ns

t

d off

Turn-off delay time

R

gen = 50 Ω

-

5070ns

t

f

Turn-off fall time

-

30

45

ns

L

d

Internal drain inductance

Measured from contact screw on

-

3.5

-

nH

tab to centre of die

L

d

Internal drain inductance

Measured from drain lead 6 mm

-

4.5

-

nH

from package to centre of die

L

s

Internal source inductance

Measured from source lead 6 mm

-

7.5

-

nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

10

A

current

I

DRM

Pulsed reverse drain current

-

40

A

V

SD

Diode forward voltage

I

F = 10 A ; VGS = 0 V

-

1.2

1.5

V

t

rr

Reverse recovery time

I

F = 10 A; -dIF/dt = 100 A/µs;

-

90

-

ns

Q

rr

Reverse recovery charge

V

GS = 0 V; VR = 30 V

-

0.35

-

µC

AVALANCHE LIMITING VALUE

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

W

DSS

Drain-source non-repetitive

I

D = 10 A ; VDD ≤ 50 V ;

-

30

mJ

unclamped inductive turn-off

V

GS = 5 V ; RGS = 50 Ω

energy

April 1993

2

Rev 1.100

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