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K7P161866A-HC25 Datasheet(PDF) 8 Page - Samsung semiconductor |
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K7P161866A-HC25 Datasheet(HTML) 8 Page - Samsung semiconductor |
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8 / 14 page  Rev 0.3 K7P161866A 512Kx36 & 1Mx18 SRAM K7P163666A Sep. 2003 - 8 - AC TEST CONDITIONS (TA=0 to 70°C, VDD=2.37 -2.63V, VDDQ=1.5V) NOTE : Parameters are tested with RQ=250 Ω and VDDQ=1.5V. Parameter Symbol Value Unit Core Power Supply Voltage VDD 2.37~2.63 V Output Power Supply Voltage VDDQ 1.5 V Input High/Low Level VIH/VIL 1.25/0.25 V Input Reference Level VREF 0.75 V Input Rise/Fall Time TR/TF 0.5/0.5 ns Input and Out Timing Reference Level 0.75 V Clock Input Timing Reference Level Cross Point V 50Ω 50Ω AC TEST OUTPUT LOAD 25Ω 5pF DQ VDDQ/2 5pF VDDQ/2 50Ω 50Ω VDDQ/2 AC CHARACTERISTICS Parameter Symbol -33 -30 -25 Unit Note Min Max Min Max Min Max Clock Cycle Time tKHKH 3.0 - 3.3 - 4.0 - ns Clock High Pulse Width tKHKL 1.2 - 1.3 - 1.6 - ns Clock Low Pulse Width tKLKH 1.2 - 1.3 - 1.6 - ns Clock High to Output Valid tKHQV -1.5 -1.6 -2.0 ns Clock High to Output Hold tKHQX 0.5 - 0.5 - 0.5 - ns Address Setup Time tAVKH 0.3 - 0.3 - 0.3 - ns Address Hold Time tKHAX 0.5 - 0.6 - 0.6 - ns Write Data Setup Time tDVKH 0.3 - 0.3 - 0.3 - ns Write Data Hold Time tKHDX 0.5 - 0.6 - 0.6 - ns SW, SW[a:d] Setup Time tWVKH 0.3 - 0.3 - 0.3 - ns SW, SW[a:d] Hold Time tKHWX 0.5 - 0.6 - 0.6 - ns SS Setup Time tSVKH 0.3 - 0.3 - 0.3 - ns SS Hold Time tKHSX 0.5 - 0.6 - 0.6 - ns Clock High to Output Hi-Z tKHQZ -1.5 -1.6 -2.0 ns Clock High to Output Low-Z tKHQX1 0.5 - 0.5 - 0.5 - ns G High to Output High-Z tGHQZ -1.5 -1.6 -2.0 ns G Low to Output Low-Z tGLQX 0.5 - 0.5 - 0.5 - ns G Low to Output Valid tGLQV -1.5 -1.6 -2.0 ns ZZ High to Power Down(Sleep Time) tZZE -15-15 - 15 ns ZZ Low to Recovery(Wake-up Time) tZZR -20-20 - 20 ns |
Similar Part No. - K7P161866A-HC25 |
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Similar Description - K7P161866A-HC25 |
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