Philips Semiconductors

Product Specification

PowerMOS transistor

BUK555-200A/B

Logic level FET

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

logic level field-effect power

transistor in a plastic envelope.

BUK555

-200A

-200B

The device is intended for use in

V

DS

Drain-source voltage

200

200

V

Switched Mode Power Supplies

I

D

Drain current (DC)

14

13

A

(SMPS), motor control, welding,

P

tot

Total power dissipation

125

125

W

DC/DC and AC/DC converters, and

T

j

Junction temperature

175

175

˚C

in automotive and general purpose

R

DS(ON)

Drain-source on-state

0.23

0.28

Ω

switching applications.

resistance;

V

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

gate

2

drain

3

source

tab

drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Drain-source voltage

-

-

200

V

V

DGR

Drain-gate voltage

R

-

200

V

±V

GS

Gate-source voltage

-

-

15

V

±V

GSM

Non-repetitive gate-source voltage t

-

20

V

-200A

-200B

I

D

Drain current (DC)

T

25 ˚C

-

14

13

A

I

D

Drain current (DC)

T

-

10

9.2

A

I

DM

Drain current (pulse peak value)

T

25 ˚C

-

56

52

A

P

tot

Total power dissipation

T

25 ˚C

-

125

W

T

stg

Storage temperature

-

- 55

175

˚C

T

j

Junction Temperature

-

-

175

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance junction to

-

-

1.2

K/W

mounting base

R

th j-a

Thermal resistance junction to

-

60

-

K/W

ambient

12 3

tab

d

g

s

April 1993

1

Rev 1.100