BAS21HT1 datasheet(2/3 Pages) ONSEMI

Part #	BAS21HT1

Description	High Voltage Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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BAS21HT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 200 Vdc)

(VR = 200 Vdc, TJ = 150°C)

IR

−

0.1

100

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR)

250

−

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

VF

−

1000

1250

mV

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

−

5.0

pF

Reverse Recovery Time

(IF = IR = 30 mAdc, RL = 100 W)

trr

−

50

ns

Notes: 1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 30 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820 W

0.1 mF

D.U.T.

VR

100 mH

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 3.0 mA

OUTPUT PULSE

(IF = IR = 30 mA; MEASURED

at iR(REC) = 3.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

Figure 2. Forward Voltage

Figure 3. Reverse Leakage

FORWARD CURRENT (mA)

7000

REVERSE VOLTAGE (V)

5000

3000

5

0

2

1

6000

4000

6

5

10

20

50

100

200

1

2

3

4

TA = −55°C

300

TA = 155°C

TA = 25°C

TA = −55°C

1

10

100

1000

1

200

400

600

800

1000

1200

155

°C

25

°C

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