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BAS21HT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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BAS21HT1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page BAS21HT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) IR − − 0.1 100 mAdc Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) 250 − Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF − − 1000 1250 mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) trr − 50 ns Notes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr +10 V 2.0 k 820 W 0.1 mF D.U.T. VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit Figure 2. Forward Voltage Figure 3. Reverse Leakage FORWARD CURRENT (mA) 7000 REVERSE VOLTAGE (V) 5000 3000 5 0 2 1 6000 4000 6 5 10 20 50 100 200 1 2 3 4 TA = −55°C 300 TA = 155°C TA = 25°C TA = −55°C 1 10 100 1000 1 200 400 600 800 1000 1200 155 °C 25 °C |
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