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2N3819 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # 2N3819
Description  N-Channel RF Amplifier
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N3819 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
C=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
C=25°C unless otherwise noted
Thermal Characteristics T
A=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.5”
× 1.6” × 0.06”
Symbol
Parameter
Ratings
Units
VDG
Drain-Gate Voltage
25
V
VGS
Gate-Source Voltage
-25
V
ID
Drain Current
50
mA
IGF
Forward Gate Current
10
mA
TSTG
Storage Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V(BR)GSS
Gate-Source Breakdwon Voltage
IG = 1.0µA, VDS = 0
25
V
IGSS
Gate Reverse Current
VGS = -15V, VDS = 0
2.0
nA
VGS(off)
Gate-Source Cutoff Voltage
VDS = 15V, ID = 2.0nA
8.0
V
VGS
Gate-Source Voltage
VDS = 15V, ID = 200µA
-0.5
-7.5
V
On Characteristics
IDSS
Zero-Gate Voltage Drain Current
VDS = 15V, VGS = 0
2.0
20
mA
Small Signal Characteristics
gfs
Forward Transfer Conductance
VDS = 15V, VGS = 0, f = 1.0KHz
2000
6500
µmhos
goss
Output Conductance
VDS= 15V, VGS = 0, f = 1.0KHz
50
µmhos
yfs
Forward Transfer Admittance
VDS= 15V, VGS = 0, f = 1.0KHz
1600
µmhos
Ciss
Input Capacitance
VDS = 15V, VGS = 0, f = 1.0KHz
8.0
pF
Crss
Reverse Transfer Capacitance
VDS = 15V, VGS = 0, f = 1.0KHz
4.0
pF
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
2N3819
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications
operating up to 450MHz, and for analog switching requiring low
capacitance.
• Sourced from process 50.
TO-92
1. Drain 2. Gate 3. Source
1


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