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2N3819 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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2N3819 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002 Epitaxial Silicon Transistor Absolute Maximum Ratings* T C=25°C unless otherwise noted * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T C=25°C unless otherwise noted Thermal Characteristics T A=25°C unless otherwise noted * Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06” Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA TSTG Storage Temperature Range -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 25 V IGSS Gate Reverse Current VGS = -15V, VDS = 0 2.0 nA VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 2.0nA 8.0 V VGS Gate-Source Voltage VDS = 15V, ID = 200µA -0.5 -7.5 V On Characteristics IDSS Zero-Gate Voltage Drain Current VDS = 15V, VGS = 0 2.0 20 mA Small Signal Characteristics gfs Forward Transfer Conductance VDS = 15V, VGS = 0, f = 1.0KHz 2000 6500 µmhos goss Output Conductance VDS= 15V, VGS = 0, f = 1.0KHz 50 µmhos yfs Forward Transfer Admittance VDS= 15V, VGS = 0, f = 1.0KHz 1600 µmhos Ciss Input Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 8.0 pF Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 4.0 pF Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1. Drain 2. Gate 3. Source 1 |
Similar Part No. - 2N3819_02 |
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Similar Description - 2N3819_02 |
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