BAV74LT3G datasheet(2/3 Pages) ONSEMI

Part #	BAV74LT3G

Description	Monolithic Dual Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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BAV74LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 5.0 mAdc)

V(BR)

50

−

Vdc

Reverse Voltage Leakage Current, (Note 3)

(VR = 50 Vdc, TJ = 125°C)

(VR = 50 Vdc)

IR

−

100

0.1

mAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

−

2.0

pF

Forward Voltage

(IF = 100 mAdc)

VF

−

1.0

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 W)

trr

−

4.0

ns

3. For each individual diode while the second diode is unbiased.

100

0.2

0.4

VF, FORWARD VOLTAGE (VOLTS)

0.6

0.8

1.0

1.2

10

1.0

0.1

TA = 85°C

10

0

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

10

20

30

40

50

1.0

0

VR, REVERSE VOLTAGE (VOLTS)

0.9

0.8

0.7

0.6

24

6

8

Figure 1. Forward Voltage

Figure 2. Leakage Current

Figure 3. Capacitance

TA = −40°C

TA = 25°C

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

Curves Applicable to Each Anode

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