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FDP14N30 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDP14N30 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP14N30 / FDPF14N30 Rev. A February 2007 UniFETTM FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features • 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 18 nC) •Low Crss ( typical 17 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. Absolute Maximum Ratings Thermal Characteristics TO-220 FDP Series G S D TO-220F FDPF Series G S D D G S Symbol Parameter FDP14N30 FDPF14N30 Unit VDSS Drain-Source Voltage 300 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 14 8.4 14 * 8.4 ∗ A A IDM Drain Current - Pulsed (Note 1) 56 56 ∗ A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 330 mJ IAR Avalanche Current (Note 1) 14 A EAR Repetitive Avalanche Energy (Note 1) 14 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 140 1.12 35 0.28 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FDP14N30 FDPF14N30 Unit RθJC Thermal Resistance, Junction-to-Case 0.89 3.56 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W * Drain current limited by maximum junction temperature |
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