©2007 Fairchild Semiconductor Corporation

1

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FDP14N30 / FDPF14N30 Rev. A

February 2007

FDP14N30 / FDPF14N30

300V N-Channel MOSFET

Features

• Low gate charge ( typical 18 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings

Thermal Characteristics

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

Symbol

Parameter

FDP14N30

FDPF14N30

Unit

Drain-Source Voltage

300

V

Drain Current

14

8.4

14 *

8.4

∗

A

A

Drain Current

- Pulsed

(Note 1)

56

56

∗

A

Gate-Source voltage

±30

V

Single Pulsed Avalanche Energy

(Note 2)

330

mJ

Avalanche Current

(Note 1)

14

A

Repetitive Avalanche Energy

(Note 1)

14

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

140

1.12

35

0.28

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

FDP14N30

FDPF14N30

Unit

Thermal Resistance, Junction-to-Case

0.89

3.56

°C/W

Thermal Resistance, Case-to-Sink Typ.

0.5

--

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W

* Drain current limited by maximum junction temperature