DTA123JET1G datasheet(11/13 Pages) ONSEMI

Part #	DTA123JET1G

Description	Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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DTA114EET1 Series

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11

TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EET1

75

°C

25

°C

−25

°C

Figure 29. Maximum Collector Voltage versus

Collector Current

Figure 30. DC Current Gain

Figure 31. Output Capacitance

Figure 32. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 33. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

1

0.1

7

6

5

4

3

2

1

0

IC, COLLECTOR CURRENT (mA)

100

10

1

100

10

1

0.01

1000

1.2

0.6

60

50

40

30

20

10

0

0.2

0.4

0.8

1.0

100

6

5

4

3

2

1

0

0.1

1

10

9

8

7

100

12

10

8

6

4

2

0

1

10

18

16

14

20

IC/IB = 10

75

°C

25

°C

TA = −25°C

VCE = 10 V

75

°C

25

°C

TA = −25°C

VO = 5 V

VO = 0.2 V

75

°C

25

°C

TA = −25°C

f = 1 MHz

IE = 0 V

TA = 25°C

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