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FOD3181 Datasheet(PDF) 10 Page - Fairchild Semiconductor |
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FOD3181 Datasheet(HTML) 10 Page - Fairchild Semiconductor |
10 / 12 page 10 www.fairchildsemi.com FOD3181 Rev. 1.0.3 Reflow Profile Output Power Derating The maximum package power dissipation is 295mW. The pack- age is limited to this level to ensure that under normal operating conditions and over extended temperature range that the semi- conductor junction temperatures do not exceed 125°C. The package power is composed of three elements; the LED, static operating power of the output IC, and the power dissipated in the output power MOSFET transistors. The power rating of the output IC is 250mW. This power is divided between the static power of the integrated circuit, which is the product of IDD times the power supply voltage (VDD – VEE). The maximum IC static output power is 150mW, (VDD – VEE) = 25V, IDD = 6mA. This maximum condition is valid over the operational temperature range of -40°C to +100°C. Under these maximum operating conditions, the output of the power MOSFET is allowed to dissi- pate 100mW of power. The absolute maximum output power dissipation versus ambi- ent temperature is shown in Figure 12. The output driver is capable of supplying 100mW of output power over the tempera- ture range from -40°C to 87°C. The output derates to 90mW at the absolute maximum operating temperature of 100°C. The output power is the product of the average output current squared times the output transistor’s RDS(ON): PO(AVG) = IO(AVG)2 • RDS(ON) The IO(AVG) is the product of the duty factor times the peak current flowing in the output. The duty factor is the ratio of the ‘on’ time of the output load current divided by the period of the operating frequency. An RDS(ON) of 2.0Ω results in an average output load current of 200mA. The load duty factor is a ratio of the average output time of the power MOSFET load circuit and period of the driving frequency. The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting output pulse width. Figure 13 shows an example of a 0.03µF gate to source capacitance with a series resistance of 40 Ω. This reactive load results in a composite average pulse width of 1.5µs. Under this load condition it is not necessary to derate the absolute maxi- mum output current out to 250kHz. • Peak reflow temperature: 260 C (package surface temperature) • Time of temperature higher than 183 C for 160 seconds or less • One time soldering reflow is recommended 245 C, 10–30 s Time (Minute) 0 300 250 200 150 100 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time above 183C, <160 sec Ramp up = 2–10C/sec 260 C peak Fig. 12 Absolute Maximum Power Dissipation vs. Ambient Temperature TA – Ambient Temperature (°C) -40 -20 0 20 40 60 80 85 0.15 0.1 0.05 0 VDD – VEE = Max. = 25V IDD = 6mA LED Power = 45mW F – Frequency (kHz) 0 0.5 1 1.5 110 250 Fig. 13 Output Current Derating vs. Frequency TA = -40°C to 100°C Load = .03µF +40Ω VDD = 20V IF = 12mA LED Duty Factor = 50% Output Pulse Width = 1.5µs |
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