HGT5A27N120BN datasheet(2/8 Pages) FAIRCHILD

Part #	HGT5A27N120BN

Description	72A, 1200V, NPT Series N-Channel IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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HGTG27N120BN / HGT5A27N12BN Rev. C2

HGTG27N120BN / HGT5A27N120BN

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HGTG27N120BN

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

1200

V

Collector Current Continuous

At TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

72

A

At TC = 110

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C110

34

A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

216

A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

±20

V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM

±30

V

Switching Safe Operating Area at TJ = 150

oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

150A at 1200V

Power Dissipation Total at TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

500

W

Power Dissipation Derating TC > 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4.0

W/oC

Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV

135

mJ

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

260

oC

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

8

µs

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

15

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by Max junction temperature.

2. ICE = 30A, L = 400µH, TJ = 125

oC

3. VCE(PK) = 960V, TJ = 125

oC, R

G = 3Ω.

Electrical Specifications

TC = 25

oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

1200

-

V

Emitter to Collector Breakdown Voltage

BVECS

IC = 10mA, VGE = 0V

15

-

V

Collector to Emitter Leakage Current

ICES

VCE = 1200V

TC = 25

oC

-

250

µA

TC = 125

oC

-

300

-

µA

TC = 150

oC-

-

4

mA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = 27A,

VGE = 15V

TC = 25

oC

-

2.45

2.7

V

TC = 150

oC-

3.8

4.2

V

Gate to Emitter Threshold Voltage

VGE(TH)

IC = 250µA, VCE = VGE

66.6

-

V

Gate to Emitter Leakage Current

IGES

VGE = ±20V

-

±250

nA

Switching SOA

SSOA

TJ = 150

oC, R

G = 3Ω, VGE = 15V,

L = 200

µH, VCE(PK) = 1200V

150

-

A

Gate to Emitter Plateau Voltage

VGEP

IC = IC110, VCE = 0.5 BVCES

-9.2

-

V

On-State Gate Charge

QG(ON)

IC = 27A,

VCE = 600V

VGE = 15V

-

270

325

nC

VGE = 20V

-

350

420

nC

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 25

oC,

ICE = 27A,

VCE = 960V,

VGE = 15V,

RG = 3Ω,

L = 1mH,

Test Circuit (Figure 18)

-24

30

ns

Current Rise Time

trI

-20

25

ns

Current Turn-Off Delay Time

td(OFF)I

-

195

240

ns

Current Fall Time

tfI

-

80

120

ns

Turn-On Energy (Note 5)

EON1

-2.2

-

mJ

Turn-On Energy (Note 5)

EON2

-2.7

3.3

mJ

Turn-Off Energy (Note 4)

EOFF

-2.3

2.8

mJ

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