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LM385BZ-1.2 Datasheet(PDF) 3 Page - ON Semiconductor |
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LM385BZ-1.2 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 9 page LM285, LM385B http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol LM285−1.2 LM385−1.2/LM385B−1.2 Unit Min Typ Max Min Typ Max Reverse Breakdown Voltage Change with Current IRmin v IR v 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 2) 1.0 mA v IR v 20 mA, TA = +25°C TA = Tlow to Thigh (Note 2) DV(BR)R − − − − − − − − 1.0 1.5 10 20 − − − − − − − − 2.0 2.5 20 25 mV Reverse Dynamic Impedance IR = 100 mA, TA = +25°C Z − 0.6 − − 0.6 − W Average Temperature Coefficient 20 mA v IR v 20 mA, TA = Tlow to Thigh (Note 2) DV(BR)/DT − 80 − − 80 − ppm/ °C Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz n − 120 − − 120 − mV Long Term Stability IR = 100 mA, TA = +25°C ± 0.1°C S − 20 − − 20 − ppm/kHR 2. Tlow = −40 °C for LM285−1.2, LM285−2.5 Thigh = +85°C for LM285−1.2, LM285−2.5 Tlow = 0 °C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 Thigh =+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5 |
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