MAC9_05 datasheet(2/6 Pages) ONSEMI

Part #	MAC9

Description	Triacs Silicon Bidirectional Thyristors

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MAC9D, MAC9M, MAC9N

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance,

Junction−to−Case

Junction−to−Ambient

RqJC

RqJA

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

TL

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

−

0.01

2.0

mA

ON CHARACTERISTICS

Peak On-State Voltage (Note 2)

(ITM = ± 11 A Peak)

VTM

−

1.2

1.6

V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IGT

10

16

18

22

50

mA

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±150 mA)

IH

−

30

50

mA

Latching Current (VD = 24 V, IG = 50 mA)

MT2(+), G(+); MT2(−), G(−)

MT2(+), G(−)

IL

−

20

30

50

80

mA

Gate Trigger Voltage (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT

0.5

0.69

0.77

0.72

1.5

V

Gate Non−Trigger Voltage (VD = 12 V, RL = 100 W, TJ = 125°C)

MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)

VGD

0.2

−

V

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current; See Figure 10.

(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/ms,

Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)

CL = 10 mF

LL = 40 mH

(di/dt)c

6.5

−

A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform,

Gate Open, TJ = 125°C)

dv/dt

500

−

V/

ms

2. Indicates Pulse Test: Pulse Width

≤ 2.0 ms, Duty Cycle ≤ 2%.

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