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MAC4DSM-001 Datasheet(PDF) 6 Page - ON Semiconductor |
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MAC4DSM-001 Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 8 page MAC4DSM, MAC4DSN http://onsemi.com 6 Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2(−) Figure 15. Critical Rate of Rise of Commutating Voltage 125 100 TJ, JUNCTION TEMPERATURE (°C) 400 TJ, JUNCTION TEMPERATURE (°C) 125 100 1000 200 0 5.0 20 0 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) 100 10 1.0 200 0 105 110 115 120 105 110 1200 1400 1600 800 600 115 120 400 600 800 10 15 GATE OPEN VPK = 400 V 800 V 600 V GATE OPEN VPK = 400 V 800 V 600 V VPK = 400 V 100°C 75°C TJ = 125°C tw VDRM (di/dt)c = 6f ITM 1000 f = 1 2 tw Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c LL 1N4007 200 V + MEASURE I − CHARGE CONTROL CHARGE TRIGGER NON-POLAR CL 51 W MT2 MT1 1N914 G 200 VRMS ADJUST FOR ITM, 60 Hz VAC Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. |
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