MAC997A6 datasheet(2/11 Pages) ONSEMI

Part #	MAC997A6

Description	Sensitive Gate Triacs Silicon Bidirectional Thyristors

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MAC997 Series

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2

(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

75

°C/W

Thermal Resistance, Junction to Ambient

RθJA

200

°C/W

Maximum Lead Temperature for Soldering Purposes for 10 Seconds

TL

260

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = +110°C

IDRM, IRRM

—

10

100

μA

ON CHARACTERISTICS

Peak On−State Voltage

(ITM = ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)

VTM

—

1.9

Volts

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MAC997A6,A8

MT2(+), G(−)

MT2(−), G(−)

MT2(−), G(+)

MT2(+), G(+)

MAC997B6,B8

MT2(+), G(−)

MT2(−), G(−)

MT2(−), G(+)

IGT

—

5.0

7.0

3.0

5.0

mA

Latching Current (VD = 12 V, IG = 10 mA)

MT2(+), G(+) All Types

MT2(+), G(−) All Types

MT2(−), G(−) All Types

MT2(−), G(+) All Types

IL

—

1.6

10.5

1.5

2.5

15

20

15

mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+) All Types

MT2(+), G(−) All Types

MT2(−), G(−) All Types

MT2(−), G(+) All Types

VGT

—

.66

.77

.84

.88

2.0

2.5

Volts

Gate Non−Trigger Voltage

(VD = 12 V, RL = 100 Ohms, TJ = 110°C)

All Four Quadrants

VGD

0.1

—

Volts

Holding Current

(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)

IH

—

1.5

10

mA

Turn-On Time

(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)

tgt

—

2.0

—

μs

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

(VD = 400 V, ITM = .84 A, Commutating dv/dt = 1.5 V/μs, Gate Open,

TJ = 110°C, f = 250 Hz, with Snubber)

di/dt(c)

1.6

—

A/ms

Critical Rate of Rise of Off−State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C)

dv/dt

20

60

—

V/μs

Repetitive Critical Rate of Rise of On−State Current

Pulse Width = 20 μs, IPKmax = 15 A, diG/dt = 1 A/μs, f = 60 Hz

di/dt

—

10

A/μs

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