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BUK573-60A Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK573-60A Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page Philips Semiconductors Product Specification PowerMOS transistor BUK573-60A/B Logic level FET STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 60 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1.0 1.5 2.0 V I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±15 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 5 V; BUK573-60A - 0.075 0.085 Ω resistance I D = 10 A BUK573-60B - 0.08 0.10 Ω DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 10 A 7 10 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 700 825 pF C oss Output capacitance - 240 350 pF C rss Feedback capacitance - 130 160 pF t d on Turn-on delay time V DD = 30 V; ID = 3 A; - 20 30 ns t r Turn-on rise time V GS = 5 V; RGS = 50 Ω; - 95 120 ns t d off Turn-off delay time R gen = 50 Ω - 80 110 ns t f Turn-off fall time - 65 85 ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree C isol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 13 A current I DRM Pulsed reverse drain current - - - 52 A V SD Diode forward voltage I F = 13 A ; VGS = 0 V - 1.1 1.3 V t rr Reverse recovery time I F = 13 A; -dIF/dt = 100 A/µs; - 60 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.20 - µC February 1994 2 Rev 1.100 |
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