© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 5

1

Publication Order Number:

MBD110DWT1/D

MBD110DWT1,

MBD330DWT1,

MBD770DWT1

Preferred Device

Dual Schottky Barrier

Diodes

Application circuit designs are moving toward the consolidation of

device count and into smaller packages. The new SOT−363 package is

a solution which simplifies circuit design, reduces device count, and

reduces board space by putting two discrete devices in one small

six−leaded package. The SOT−363 is ideal for low−power surface

mount applications where board space is at a premium, such as

portable products.

Surface Mount Comparisons:

SOT−363

SOT−23

4.6

7.6

120

225

Device Count

2

1

Space Savings:

Package

1

 SOT−23

2

 SOT−23

SOT−363

40%

70%

The MBD110DW, MBD330DW, and MBD770DW devices are

spin−offs of our popular MMBD101LT1, MMBD301LT1, and

MMBD701LT1 SOT−23 devices. They are designed for

high−efficiency UHF and VHF detector applications. Readily

available to many other fast switching RF and digital applications.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

MBD110DWT1

MBD330DWT1

MBD770DWT1

7.0

30

70

V

120

mW

Junction Temperature

−55 to +125

°C

Storage Temperature Range

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

SC−88 / SOT−363

CASE 419B

STYLE 6

MARKING DIAGRAM

Anode 1

6 Cathode

Cathode 3

4 Anode

N/C 2

5 N/C

xx M

G

G

xx

= Device Code

Refer to Ordering Table,

page 2

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

1

6

1

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION