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BDV65B Datasheet(PDF) 3 Page - ON Semiconductor |
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BDV65B Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 4 page BDV65B BDV64B http://onsemi.com 3 10 0.1 IC, COLLECTOR CURRENT (A) 10 0.1 VBE(sat) @ IC/IB = 250 Figure 4. “On” Voltages 1 1 10 IC, COLLECTOR CURRENT (A) 0.1 1 Figure 5. “On” Voltages 0.1 10 1 VBE(sat) @ IC/IB = 250 Figure 6. Active Region Safe Operating Area 100 1 VCE, COLLECTOR−EMITTER VOLTAGE (V) 50 20 5 10 50 100 SECONDARY BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT BDV65B, BDV64B dc 5.0 ms 1.0 ms 100 μs 10 1 30 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C, TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 7. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 7. Thermal Response t, TIME (ms) 1.0 0.01 0.5 0.2 0.1 0.05 0.03 0.01 0.05 0.1 0.5 1.0 5 10 50 100 1000 ZθJC(t) = r(t) RθJC RθJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZθJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 (SINGLE PULSE) 0.2 0.05 0.1 0.02 0.01 500 |
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