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BDV65B Datasheet(PDF) 3 Page - ON Semiconductor

Part # BDV65B
Description  Complementary Silicon Plastic Power Darlingtons
Download  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BDV65B Datasheet(HTML) 3 Page - ON Semiconductor

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BDV65B BDV64B
http://onsemi.com
3
10
0.1
IC, COLLECTOR CURRENT (A)
10
0.1
VBE(sat) @ IC/IB = 250
Figure 4. “On” Voltages
1
1
10
IC, COLLECTOR CURRENT (A)
0.1
1
Figure 5. “On” Voltages
0.1
10
1
VBE(sat) @ IC/IB = 250
Figure 6. Active Region Safe Operating Area
100
1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
50
20
5
10
50
100
SECONDARY BREAKDOWN
LIMITED @ TJ v 150°C
THERMAL LIMIT @ TC = 25°C
BONDING WIRE LIMIT
BDV65B, BDV64B
dc
5.0 ms 1.0 ms
100 μs
10
1
30
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C, TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 7. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 7. Thermal Response
t, TIME (ms)
1.0
0.01
0.5
0.2
0.1
0.05
0.03
0.01
0.05
0.1
0.5
1.0
5
10
50
100
1000
ZθJC(t) = r(t) RθJC
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
(SINGLE PULSE)
0.2
0.05
0.1
0.02
0.01
500


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