© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 11

1

Publication Order Number:

BDX33B/D

BDX33B, BDX33C* (NPN)

BDX34B, BDX34C* (PNP)

BDX33C and BDX34C are Preferred Devices

Darlington Complementary

Silicon Power Transistors

These devices are designed for general purpose and low speed

switching applications.

Features

= 100 Vdc (min) − BDX33C, BDX334C

− BDX33B, 33C/34B, 34C

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

BDX33B, BDX34B

BDX33C, BDX34C

80

100

Vdc

Collector−Base Voltage

BDX33B, BDX34B

BDX33C, BDX34C

80

100

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current

− Continuous

− Peak

10

15

Adc

Base Current

0.25

Adc

Derate above 25

°C

70

0.56

W

W/

_C

Operating and Storage Junction

Temperature Range

−65 to +150

_C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

1.78

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 65 WATTS

TO−220AB

CASE 221A−09

STYLE 1

1

http://onsemi.com

MARKING DIAGRAM

BDX3xy = Device Code

x = 3 or 4

y = B or C

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

2

3

BDX3xyG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Preferred devices are recommended choices for future use

and best overall value.