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MBR160 Datasheet(PDF) 1 Page - ON Semiconductor

Part # MBR160
Description  Axial Lead Rectifiers
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR160 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 8
1
Publication Order Number:
MBR150/D
MBR150, MBR160
MBR160 is a Preferred Device
Axial Lead Rectifiers
The MBR150/160 series employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
These are Pb−Free Devices*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
MBR150
MBR160
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
60
V
RMS Reverse Voltage
MBR150
MBR160
VR(RMS)
35
42
V
Average Rectified Forward Current (Note 1)
(VR(equiv) v 0.2 VR(dc), TL = 90°C,
RqJA = 80°C/W, P.C. Board Mounting, TA = 55°C)
IO
1.0
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz, TL = 70°C)
IFSM
25
(for one
cycle)
A
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
TJ, Tstg
− 65 to
+150
°C
THERMAL CHARACTERISTICS (Notes 1 and 2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
80
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32
″ from case.
2. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE − 50 AND 60 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
MARKING DIAGRAM
A
= Assembly Location
MBR1x0 = Device Code
x = 5 or 6
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
A
MBR1x0
YYWW
G
G
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
DO−41
AXIAL LEAD
CASE 59
STYLE 1


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