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MBR160 Datasheet(PDF) 1 Page - ON Semiconductor |
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MBR160 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 8 1 Publication Order Number: MBR150/D MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Low Reverse Current • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds • Polarity: Cathode Indicated by Polarity Band MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage MBR150 MBR160 Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 60 V RMS Reverse Voltage MBR150 MBR160 VR(RMS) 35 42 V Average Rectified Forward Current (Note 1) (VR(equiv) v 0.2 VR(dc), TL = 90°C, RqJA = 80°C/W, P.C. Board Mounting, TA = 55°C) IO 1.0 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C) IFSM 25 (for one cycle) A Operating and Storage Junction Temperature Range (Reverse Voltage Applied) TJ, Tstg − 65 to +150 °C THERMAL CHARACTERISTICS (Notes 1 and 2) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 80 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Lead Temperature reference is cathode lead 1/32 ″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE − 50 AND 60 VOLTS Preferred devices are recommended choices for future use and best overall value. http://onsemi.com MARKING DIAGRAM A = Assembly Location MBR1x0 = Device Code x = 5 or 6 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) A MBR1x0 YYWW G G See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ORDERING INFORMATION DO−41 AXIAL LEAD CASE 59 STYLE 1 |
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