© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 2

1

Publication Order Number:

BS108/D

BS108

Preferred Device

Small Signal MOSFET

250 mAmps, 200 Volts,

Logic Level

N−Channel TO−92

This MOSFET is designed for high voltage, high speed switching

applications such as line drivers, relay drivers, CMOS logic,

microprocessor or TTL to high voltage interface and high voltage

display drivers.

Features

many Devices

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain −Source Voltage

200

Vdc

Gate−Source Voltage

±20

Vdc

Drain Current

Continuous (Note 1)

Pulsed (Note 2)

250

500

mAdc

Total Power Dissipation

350

6.4

mW

mW/

°C

Operating and Storage Temperature Range

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

BS108

TO−92

1000 Units/Box

BS108 = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MARKING

DIAGRAM

D

G

N−Channel

S

250 mAMPS

200 VOLTS

BS108ZL1

TO−92

2000/Ammo Pack

Preferred devices are recommended choices for future use

and best overall value.

BS108G

TO−92

(Pb−Free)

1000 Units/Box

BS108ZL1G

TO−92

(Pb−Free)

2000/Ammo Pack

(Note: Microdot may be in either location)

http://onsemi.com

TO−92

CASE 29−11

STYLE 30

1

2

3

BS108

AYWW

G

G