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BSP52T1 Datasheet(PDF) 2 Page - ON Semiconductor |
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BSP52T1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page BSP52T1, BSP52T3 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 90 − Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 0) ICES − 10 mAdc Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO − 10 mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE 1000 2000 − − − Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VCE(sat) − 1.3 Vdc Base-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VBE(sat) − 1.9 Vdc 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% |
Similar Part No. - BSP52T1_05 |
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Similar Description - BSP52T1_05 |
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