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BS170RLRP Datasheet(PDF) 1 Page - ON Semiconductor |
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BS170RLRP Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 5 1 Publication Order Number: BS170/D BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain − Source Voltage VDS 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS VGSM ±20 ±40 Vdc Vpk Drain Current (Note) ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD 350 mW Operating and Storage Junction Temperature Range TJ, Tstg − 55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. NOTE: The Power Dissipation of the package may result in a lower continuous drain current. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. BS170 AYWW G G BS170 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM & PIN ASSIGNMENT D G TO−92 (TO−226) CASE 29 STYLE 30 N−Channel S 1 2 3 1 Drain 3 Source 2 Gate 500 mA, 60 Volts RDS(on) = 5.0 W Preferred devices are recommended choices for future use and best overall value. http://onsemi.com |
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