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MBR340 Datasheet(PDF) 1 Page - ON Semiconductor |
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MBR340 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 4 page  © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 7 1 Publication Order Number: MBR340/D MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Extremely Low VF • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Low Stored Charge, Majority Carrier Conduction • Pb−Free Packages are Available* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds • Polarity: Cathode indicated by Polarity Band MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current TA = 65°C (RqJA = 28°C/W, P.C. Board Mounting) IO 3.0 A Non−Repetitive Peak Surge Current (Note 1) (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75°C) IFSM 80 A Operating and Storage Junction Temperature Range (Reverse Voltage Applied) (Note 2) TJ, Tstg −65 to +175 °C THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, Junction−to−Ambient (see Note 5, Mounting Method 3) RqJA 28 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Lead Temperature reference is cathode lead 1/32 in from case. 2. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES, 40 VOLTS http://onsemi.com Device Package Shipping† ORDERING INFORMATION AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 Preferred devices are recommended choices for future use and best overall value. MBR340 Axial Lead 500 Units / Bag MBR340RL Axial Lead 1500/Tape & Reel MARKING DIAGRAM A MBR 340 YYWW G G MBR340RLG Axial Lead (Pb−Free) 1500/Tape & Reel MBR340G Axial Lead (Pb−Free) 500 Units / Bag †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. A = Assembly Location YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) |
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