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MBR40250TG Datasheet(PDF) 2 Page - ON Semiconductor |
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MBR40250TG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MBR40250, MBR40250T, MBRF40250T http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 250 V Average Rectified Forward Current (Rated VR) TC = 82°C MBR40250, MBR40250T (Rated VR) TC = 46°C MBRF40250T IF(AV) 40 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 82°C MBR40250, MBR40250T (Rated VR, Square Wave, 20 kHz) TC = 46°C MBRF40250T IFRM 80 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 20 kHz) IFSM 150 A Storage Temperature Tstg *65 to +175 °C Operating Junction Temperature TJ *65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance Junction−to−Case MBR40250(T) MBRF40250 Junction−to−Ambient MBR40250(T) MBRF40250 RqJC RqJA 2.0 3.0 60 50 °C/W ELECTRICAL CHARACTERISTICS Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) IF = 20 A, TC = 25°C IF = 20 A, TC = 125°C IF = 40 A, TC = 25°C IF = 40 A, TC = 125°C VF 0.86 0.71 0.97 0.86 V Maximum Instantaneous Reverse Current (Note 1) Rated DC Voltage, TC = 25°C Rated DC Voltage, TC = 125°C IR 0.03 30 mA Maximum Reverse Recovery Time IF = 1.0 A, di/dt = 50 A/ms, TC = 25°C trr 35 ns DYNAMIC CHARACTERISTICS Capacitance VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz CT 500 pF 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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