MC33151D datasheet(2/12 Pages) ONSEMI

Part #	MC33151D

Description	High Speed Dual MOSFET Drivers

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Manufacturer	ONSEMI [ON Semiconductor]

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MC34151, MC33151

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Power Supply Voltage

VCC

20

V

Logic Inputs (Note 1)

Vin

−0.3 to VCC

V

Drive Outputs (Note 2)

Totem Pole Sink or Source Current

Diode Clamp Current (Drive Output to VCC)

IO

IO(clamp)

1.5

1.0

A

Power Dissipation and Thermal Characteristics

D Suffix SOIC−8 Package Case 751

Maximum Power Dissipation @ TA = 50°C

Thermal Resistance, Junction−to−Air

P Suffix 8−Pin Package Case 626

Maximum Power Dissipation @ TA = 50°C

Thermal Resistance, Junction−to−Air

PD

RqJA

PD

RqJA

0.56

180

1.0

100

W

°C/W

W

°C/W

Operating Junction Temperature

TJ

+150

°C

Operating Ambient Temperature

MC34151

MC33151

MC33151V

TA

0 to +70

−40 to +85

−40 to +125

°C

Storage Temperature Range

Tstg

−65 to +150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (VCC = 12 V, for typical values TA = 25°C, for min/max values TA is the only operating

ambient temperature range that applies [Note 3], unless otherwise noted.)

Characteristics

Symbol

Min

Typ

Max

Unit

LOGIC INPUTS

Input Threshold Voltage −

Output Transition High to Low State

Output Transition Low to High State

VIH

VIL

−

0.8

1.75

1.58

2.6

−

V

Input Current − High State (VIH = 2.6 V)

Input Current − Low State (VIL = 0.8 V)

IIH

IIL

−

200

20

500

100

mA

DRIVE OUTPUT

Output Voltage − Low State (ISink = 10 mA)

Output Voltage − Low State (ISink = 50 mA)

Output Voltage − Low State (ISink = 400 mA)

Output Voltage − High State (ISource = 10 mA)

Output Voltage − High State (ISource = 50 mA)

Output Voltage − High State (ISource = 400 mA)

VOL

VOH

−

10.5

10.4

9.5

0.8

1.1

1.7

11.2

11.1

10.9

1.2

1.5

2.5

−

V

Output Pulldown Resistor

RPD

−

100

−

k

W

SWITCHING CHARACTERISTICS (TA = 25°C)

Propagation Delay (10% Input to 10% Output, CL = 1.0 nF)

Logic Input to Drive Output Rise

Logic Input to Drive Output Fall

tPLH(in/out)

tPHL(in/out)

−

35

36

100

ns

Drive Output Rise Time (10% to 90%) CL = 1.0 nF

Drive Output Rise Time (10% to 90%) CL = 2.5 nF

tr

−

14

31

30

−

ns

Drive Output Fall Time (90% to 10%) CL = 1.0 nF

Drive Output Fall Time (90% to 10%) CL = 2.5 nF

tf

−

16

32

30

−

ns

TOTAL DEVICE

Power Supply Current

Standby (Logic Inputs Grounded)

Operating (CL = 1.0 nF Drive Outputs 1 and 2, f = 100 kHz)

ICC

−

6.0

10.5

10

15

mA

Operating Voltage

VCC

6.5

−

18

V

1. For optimum switching speed, the maximum input voltage should be limited to 10 V or VCC, whichever is less.

2. Maximum package power dissipation limits must be observed.

3. Tlow =0°C for MC34151

Thigh = +70°C for MC34151

−40

°C for MC33151

+85

°C for MC33151

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