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ONSEMI |
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4 page
MC44605 http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (VCC and VC = 12 V, Rref = 10 kW, CT = 2.2 nF, for typical values TA = 25°C, for Characteristic Pin # Symbol Min Typ Max Unit ERROR AMPLIFIER SECTION Voltage Feedback Input (VE/A out = 2.5 V) 14 VFB 2.4 2.5 2.6 V Input Bias Current (VFB = 2.5 V) 14 IFB−ib −2.0 −0.6 − mA Open Loop Voltage Gain (VE/A out = 2.0 V to 4.0 V) AVOL 65 70 − dB Unity Gain Bandwidth TJ = 25°C TA = −25° to +85°C BW − − − − − 5.5 MHz Voltage Feedback Input Line Regulation (VCC = 10 V to 15 V) VFBline−reg −10 − 10 mV Output Current Sink (VE/A out = 1.5 V, VFB = 2.7 V) TA = −25° to +85°C Source (VE/A out = 5.0 V, VFB = 2.3 V) TA = −25° to +85°C 13 ISink ISource 2.0 −2.0 12 − − −0.2 mA Output Voltage Swing High State (IE/A out (source) = 0.5 mA, VFB = 2.3 V) Low State (IE/A out (sink) = 0.33 mA, VFB = 2.7 V) 13 VOH VOL 5.5 − 6.5 1.0 7.5 1.1 V CURRENT SENSE SECTION Maximum Current Sense Input Threshold (VFeedback (pin14) = 2.3 V and VSoft−Start (pin11) = 1.2 V) 7 Vcs−th 0.96 1.0 1.04 V Input Bias Current 7 Ics−ib −10 −2.0 − mA Propagation Delay (Current Sense Input to Output at VTH of MOS transistor = 3.0 V) tPLH(In/Out) − 120 200 ns OSCILLATOR AND SYNCHRONIZATION SECTION Frequency (TA = −25° to +85°C) FOSC 16 − 20 kHz Frequency Change with Voltage (VCC = 10 V to 15 V) DFOSC/DV − 0.05 − %/V Frequency Change with Temperature (TA = −25° to +85°C) DFOSC/DT − 0.05 − %/ °C Ratio Charge Current/Reference Current (TA = −25° to +85°C) Icharge/Iref 0.39 − 0.48 − Free Mode Oscillator Ratio = Idischarge/(Idischarge + Icharge) D 72 75 78 % Synchronization Input Threshold Voltage 9 Vsyncth −250 −200 −150 mV Negative Clamp Level (Isyncth−in = 2.0 mA) NEG−SYNC −0.65 −0.5 −0.34 V UNDERVOLTAGE LOCKOUT SECTION Startup Threshold 1 Vstup−th 13.6 14.5 15.4 V Disable Voltage After Threshold Turn−On (UVLO 1) (TA = −25° to +85°C) 1 Vdisable1 8.3 − 9.6 V Disable Voltage After Threshold Turn−On (UVLO 2) (TA = −25° to +85°C) 1 Vdisable2 7.0 7.5 8.0 V 4. Adjust VCC above the startup threshold before setting to 12 V. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible. |
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