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MGF4319 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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MGF4319 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 3 page  MGF431xG MITSUBISHI SEMICONDUCTOR <GaAs FET> Super Low Noise InGaAs HEMT MITSUBISHI ELECTRIC as of Apr.'98 f S11 S21 S12 S22 MSG/MAG K (GHz) Magn. Angle Magn. Angle Magn. Angle Magn. Angle (dB) 1 0.990 -22.3 5.775 158.1 0.020 71.9 0.533 -19.2 28.8 0.10 2 0.967 -40.6 5.585 140.6 0.035 61.8 0.514 -33.4 26.5 0.19 3 0.925 -53.2 5.401 128.9 0.051 53.3 0.489 -42.9 24.3 0.27 4 0.874 -70.9 5.161 111.8 0.064 42.4 0.457 -58.2 21.6 0.35 5 0.831 -88.8 4.899 96.8 0.075 29.3 0.424 -71.6 19.8 0.43 6 0.783 -105.7 4.626 80.8 0.083 19.0 0.391 -87.5 18.1 0.50 7 0.743 -120.6 4.316 67.9 0.087 9.1 0.369 -100.6 16.8 0.57 8 0.706 -132.1 4.100 56.4 0.090 4.1 0.357 -110.8 15.9 0.64 9 0.682 -144.7 3.887 43.2 0.093 -6.4 0.357 -122.3 15.1 0.69 10 0.670 -159.1 3.765 30.1 0.094 -14.3 0.351 -133.0 14.7 0.72 11 0.639 -171.8 3.617 17.5 0.095 -24.4 0.339 -143.5 14.0 0.80 12 0.617 175.3 3.526 4.5 0.096 -33.5 0.329 -154.0 13.5 0.86 13 0.591 163.1 3.421 -8.1 0.094 -42.5 0.328 -163.9 13.0 0.91 14 0.571 152.9 3.349 -17.4 0.094 -50.9 0.328 -171.3 12.7 0.95 15 0.565 140.1 3.333 -29.6 0.096 -61.1 0.343 179.5 12.7 0.96 16 0.560 125.8 3.349 -44.4 0.098 -74.1 0.351 170.5 12.7 0.98 17 0.533 109.8 3.356 -59.9 0.101 -88.8 0.337 161.8 12.5 1.01 18 0.484 91.2 3.337 -77.0 0.104 -105.1 0.310 151.6 12.1 1.11 Typical Characteristics S Parameters (Ta=25˚C , VDS=2V , ID=10mA ) Noise Parameters (Ta=25˚C , VDS=2V , ID=10mA ) f (GHz) G opt. Rn ( Ω) NFmin.(dB) Gs (dB) Magn. Angle 4 0.76 49 12.5 0.31 18.3 8 0.59 95 4.7 0.47 15.9 12 0.48 139 2.3 0.60 13.5 14 0.41 166 1.8 0.69 12.3 18 0.34 -142 1.5 0.88 9.9 MGF4316G MGF4319G 0.24 0.35 0.45 0.50 0.61 |
Similar Part No. - MGF4319 |
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Similar Description - MGF4319 |
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