MCR8DSNT4 datasheet(4/6 Pages) ONSEMI

Part #	MCR8DSNT4

Description	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR8DSM, MCR8DSN

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Figure 3. On−State Characteristics

Figure 4. Transient Thermal Response

Figure 5. Typical Gate Trigger Current versus

Junction Temperature

Figure 6. Typical Gate Trigger Voltage versus

Junction Temperature

5.0

0

VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)

100

10

1.0

0.1

t, TIME (ms)

1.0

0.1

1.0

0.1

0.01

4.0

−25

20

−40

TJ, JUNCTION TEMPERATURE (°C)

1000

10

TJ, JUNCTION TEMPERATURE (°C)

−25

65

−40

0.1

20

5.0

1.0

3.0

10

100

1000

10 K

50

110

65

5.0

110

35

50

80

TYPICAL @ TJ = 25°C

MAXIMUM @ TJ = 25°C

MAXIMUM @ TJ = 110°C

ZqJC(t) = RqJC(t)Sr(t)

1.0

2.0

−10

35

95

100

−10

95

80

GATE OPEN

RGK = 1.0 KW

Figure 7. Typical Holding Current versus

Junction Temperature

Figure 8. Typical Latching Current versus

Junction Temperature

65

110

−40

TJ, JUNCTION TEMPERATURE (°C)

1.0

0.1

−25

5.0

20

50

95

10

−10

35

80

RGK = 1.0 KW

65

110

−40

1.0

0.1

−25

5.0

20

50

95

10

−10

35

80

RGK = 1.0 KW

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