MCR218-2G datasheet(1/4 Pages) ONSEMI

Part #	MCR218-2G

Description	Silicon Controlled Rectifiers Reverse Blocking Thyristors

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2005 − Rev. 4

1

Publication Order Number:

MCR218/D

MCR218−2, MCR218−4,

MCR218−6

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supplies; or wherever

half-wave silicon gate-controlled, solid-state devices are needed.

Features

• Glass-Passivated Junctions

• Blocking Voltage to 400 Volts

• TO-220 Construction − Low Thermal Resistance, High Heat

Dissipation and Durability

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = *40 to 125°C, Gate Open)

MCR218−2

MCR218−4

MCR218−6

VDRM,

VRRM

50

200

400

V

On-State RMS Current

(180

° Conduction Angles; TC = 70°C)

IT(RMS)

8.0

A

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)

ITSM

100

A

Circuit Fusing Considerations (t = 8.3 ms)

I2t

26

A2s

Forward Peak Gate Power

(Pulse Width

≤ 1.0 ms, TC = 70°C)

PGM

5.0

W

Forward Average Gate Power

(t = 8.3 ms, TC = 70°C)

PG(AV)

0.5

W

Forward Peak Gate Current

(Pulse Width

≤ 1.0 ms, TC = 70°C)

IGM

2.0

A

Operating Junction Temperature Range

TJ

−40 to +125

°C

Storage Temperature Range

Tstg

−40 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCRs

8 AMPERES RMS

50 thru 400 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MCR218−2

TO220AB

500 Units/Bulk

MCR218−4

TO220AB

MCR218−6

TO220AB

500 Units/Bulk

C

G

A

TO−220AB

CASE 221A−07

STYLE 3

1

2

3

4

http://onsemi.com

MARKING

DIAGRAM

A

= Assembly Location

Y

= Year

WW

= Work Week

MCR218x

= Device Code

x = 2, 4 or 6

G

= Pb−Free Package

AKA

= Diode Polarity

MCR218−2G

TO220AB

(Pb−Free)

500 Units/Bulk

MCR218−4G

TO220AB

(Pb−Free)

500 Units/Bulk

MCR218−6G

TO220AB

(Pb−Free)

500 Units/Bulk

Preferred devices are recommended choices for future use

and best overall value.

AY

WW

MCR218x−G

AKA

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