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MCR310-10 Datasheet(PDF) 1 Page - ON Semiconductor

Part # MCR310-10
Description  Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MCR310-10 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
Publication Order Number:
MCR310/D
MCR310 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
Center Gate Geometry for Uniform Current Density
All Diffused and Glass-Passivated Junctions for Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Low Trigger Currents, 200 mA Maximum for Direct Driving from
Integrated Circuits
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse
Blocking Voltage(1)
(TJ = −40 to 110°C)
(1/2 Sine Wave, RGK = 1 kΩ)
MCR310-6
MCR310-8
MCR310-10
VDRM
or
VRRM
400
600
800
Volts
On-State RMS Current (TC = 75°C)
IT(RMS)
10
Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = −40 to 110°C)
ITSM
100
Amps
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Peak Gate Voltage (t
p 10 ms)
VGM
±5
Volts
Peak Gate Current (t
p 10 ms)
IGM
1
Amp
Peak Gate Power (t
p 10 ms)
PGM
5
Watts
Average Gate Power
PG(AV)
0.75
Watt
Operating Junction Temperature Range
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Mounting Torque
8
in.-lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.2
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
10 AMPERES RMS
400 thru 800 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MCR310−6
TO220AB
500/Box
MCR310−8
TO220AB
MCR310−10
TO220AB
500/Box
500/Box
C
G
A
TO−220AB
CASE 221A
STYLE 3
1
2
3
4
http://onsemi.com
MARKING
DIAGRAM
x
= 6, 8 or 10
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
MCR310−6G
TO220AB
(Pb−Free)
500/Box
MCR310−8G
TO220AB
(Pb−Free)
500/Box
MCR310−10G
TO220AB
(Pb−Free)
500/Box
MCR310−xG
AYWW
Preferred devices are recommended choices for future use
and best overall value.


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