MJD32 datasheet(4/8 Pages) ONSEMI

Part #	MJD32

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

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4

5

IB, BASE CURRENT (mA)

10

20

1.2

0.4

0

50

100

200

500

2

0.8

TJ = 25°C

1.6

2

1

IC = 0.3 A

1000

Figure 7. Collector Saturation Region

300

VR, REVERSE VOLTAGE (VOLTS)

Ceb

0.1

200

100

0.5

1

10

40

TJ = +25°C

t, TIME (ms)

1

0.01

1 k

0.3

0.2

0.07

RqJC(t) = r(t) RqJC

RqJC = 8.33°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

SINGLE PULSE

0.01

Figure 8. Capacitance

0.7

D = 0.5

Figure 9. Thermal Response

1 A

3 A

70

50

30

0.2 0.3

2

3

5

20 30

Ccb

0.5

0.1

0.05

0.03

0.02

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1

2

3

5

10

20

30

50

100

200 300

500

0.2

0.1

0.05

0.01

10

1.5

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.01

3

150

1

0.3

0.2

3

0.05

0.03

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

5

7

20

70

10

TC = 25°C SINGLE PULSE

TJ = 150°C

100

ms

1ms

dc

2

0.02

0.1

0.5

2

5

Figure 10. Active Region Safe Operating Area

50

30

100

CURVES APPLY BELOW RATED VCEO

500

ms

MJD31, MJD32

MJD31C, MJD32C

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 10 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 9. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

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