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MJD41CT4 Datasheet(PDF) 4 Page - ON Semiconductor |
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MJD41CT4 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page MJD41C (NPN) MJD42C (PNP) http://onsemi.com 4 t, TIME (ms) 0.01 0.01 0.05 1 2 5 10 20 50 100 200 500 0.1 0.5 0.2 1000 0.03 0.3 3 30 300 0.02 2.5 A Figure 7. Collector Saturation Region IB, BASE CURRENT (mA) 1.2 0.4 0 10 2 0.8 TJ = 25°C 1.6 IC = 1 A Figure 8. Capacitance VR, REVERSE VOLTAGE (VOLTS) Cob 0.5 50 2 5 20 50 1 0.2 0.1 0.05 RqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.2 SINGLE PULSE Figure 9. Thermal Response 0.5 D = 0.5 5 A 1000 500 300 200 100 50 30 20 300 30 70 100 200 1 3 10 30 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01 TJ = 25°C Cib 10 70 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.01 100 1 0.3 3 0.1 0.03 WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT Figure 10. Maximum Forward Bias Safe Operating Area TC = 25°C SINGLE PULSE TJ = 150°C dc 0.5 2 5 1ms MJD41C, 42C 50 30 20 10 7 5 3 2 1 0.05 100 ms CURVES APPLY BELOW RATED VCEO 5ms 500 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
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