MJD18002D2T4 datasheet(6/11 Pages) ONSEMI

Part #	MJD18002D2T4

Description	POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor

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MJD18002D2

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6

Typical Switching Characteristics

Figure 13. Resistive Switch Time, toff

IC, COLLECTOR CURRENT (AMPS)

5.5

1.6

1

0.7

0.4

0.1

Figure 14. Inductive Storage Time, tsi @ IC/IB = 5

1.5

Figure 15. Inductive Switching, tc & tfi @ IC/IB = 5

IC, COLLECTOR CURRENT (AMPS)

700

100

1.5

1

0.5

0

Figure 16. Inductive Storage Time

0

hFE, FORCED GAIN

15

9

6

3

0

Figure 17. Inductive Fall Time

hFE, FORCED GAIN

15

5

3

0

hFE, FORCED GAIN

1800

15

6

3

0

600

Figure 18. Inductive Cross−Over Time

1000

2.5

3.0

3.5

4.0

4.5

5.0

12

1

2

3

4

300

500

11

200

400

600

12

9

IBon = IBoff

VCC = 300 V

PW = 40

ms

IBon = IBoff,

VCC = 15 V,

VZ = 300 V

LC = 200 mH

IBon = IBoff,

VCC = 15 V,

VZ = 300 V

LC = 200 mH

IBon = IBoff,

VCC = 15 V,

VZ = 300 V

LC = 200 mH

1200

TJ = 125°C

TJ = 25°C

IC/IB = 5

IC/IB = 10

1.3

2.0

IC, COLLECTOR CURRENT (AMPS)

3

1.5

1

0.5

0

1

2

2.5

TJ = 125°C

IBon = IBoff,

VCC = 15 V,

VZ = 300 V

LC = 200 mH

TJ = 25°C

200

400

600

TJ = 125°C

TJ = 25°C

IC/IBon = 5

tfi

tc

TJ = 125°C

TJ = 25°C

IC = 300 mA

IC = 1 A

TJ = 125°C

TJ = 25°C

9

713

800

IC = 1 A

IC = 0.3 A

IBon = IBoff,

VCC = 15 V,

VZ = 300 V

LC = 200 mH

TJ = 125°C

TJ = 25°C

IC = 1 A

IC = 0.3 A

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