MJD44H11T4G datasheet(2/7 Pages) ONSEMI

Part #	MJD44H11T4G

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD44H11 (NPN) MJD45H11 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 30 mA, IB = 0)

VCEO(sus)

80

−

Vdc

Collector Cutoff Current

(VCE = Rated VCEO, VBE = 0)

ICES

−

10

mA

Emitter Cutoff Current

(VEB = 5 Vdc)

IEBO

−

50

mA

ON CHARACTERISTICS

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.4 Adc)

VCE(sat)

−

1

Vdc

Base−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

VBE(sat)

−

1.5

Vdc

DC Current Gain

(VCE = 1 Vdc, IC = 2 Adc)

hFE

60

−

DC Current Gain

(VCE = 1 Vdc, IC = 4 Adc)

40

−

DYNAMIC CHARACTERISTICS

Collector Capacitance

(VCB = 10 Vdc, ftest = 1 MHz)

MJD44H11

MJD45H11

Ccb

−

130

230

−

pF

Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)

MJD44H11

MJD45H11

fT

−

50

40

−

MHz

SWITCHING TIMES

Delay and Rise Times

(IC = 5 Adc, IB1 = 0.5 Adc)

MJD44H11

MJD45H11

td + tr

−

300

135

−

ns

Storage Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)

MJD44H11

MJD45H11

ts

−

500

−

ns

Fall Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc

MJD44H11

MJD45H11

tf

−

140

100

−

ns

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