Electronic Components Datasheet Search |
|
MJD44H11T4G Datasheet(PDF) 2 Page - ON Semiconductor |
|
MJD44H11T4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page MJD44H11 (NPN) MJD45H11 (PNP) http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) VCEO(sus) 80 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA Emitter Cutoff Current (VEB = 5 Vdc) IEBO − − 50 mA ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1 Vdc Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) hFE 60 − − − DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) 40 − − DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) MJD44H11 MJD45H11 Ccb − − 130 230 − − pF Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11 MJD45H11 fT − − 50 40 − − MHz SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11 MJD45H11 td + tr − − 300 135 − − ns Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11 MJD45H11 ts − − 500 500 − − ns Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc MJD44H11 MJD45H11 tf − − 140 100 − − ns |
Similar Part No. - MJD44H11T4G |
|
Similar Description - MJD44H11T4G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |