MJD117-001 datasheet(2/8 Pages) ONSEMI

Part #	MJD117-001

Description	Complementary Darlington Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD112 (NPN) MJD117 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ICEO

−

20

mAdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ICBO

−

20

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

2

mAdc

Collector−Cutoff Current

(VCB = 80 Vdc, IE = 0)

ICBO

−

10

mAdc

Emitter−Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

2

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.5 Adc, VCE = 3 Vdc)

(IC = 2 Adc, VCE = 3 Vdc)

(IC = 4 Adc, VCE = 3 Vdc)

hFE

500

1000

200

−

12,000

−

Collector−Emitter Saturation Voltage

(IC = 2 Adc, IB = 8 mAdc)

(IC = 4 Adc, IB = 40 mAdc)

VCE(sat)

−

2

3

Vdc

Base−Emitter Saturation Voltage

(IC = 4 Adc, IB = 40 mAdc)

VBE(sat)

−

4

Vdc

Base−Emitter On Voltage

(IC = 2 Adc, VCE = 3 Vdc)

VBE(on)

−

2.8

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)

fT

25

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJD117

MJD112

Cob

−

200

100

pF

2. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

*These ratings are applicable when surface mounted on the minimum pad sizes recommended.

0.04

0.2

4

0.1

0.06

0.6

1

4

IC, COLLECTOR CURRENT (AMP)

VCC = 30 V

IC/IB = 250

2

1

0.8

0.6

0.4

0.2

ts

tf

Figure 1. Switching Times Test Circuit

Figure 2. Switching Times

V2

APPROX

+8 V

0

≈ 8 k

SCOPE

VCC

−30 V

RC

51

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

25

ms

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

+ 4 V

tr

td @ VBE(off) = 0 V

PNP

NPN

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

V1

APPROX

−12 V

TUT

RB

D1

≈ 60

0.4

2

IB1 = IB2

TJ = 25°C

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