MJD210T4 datasheet(4/6 Pages) ONSEMI

Part #	MJD210T4

Description	Complementary Plastic Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD200 (NPN) MJD210 (PNP)

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4

IC, COLLECTOR CURRENT (A)

Figure 5. DC Current Gain

Figure 6. “On” Voltage

IC, COLLECTOR CURRENT (A)

200

400

0.07 0.1

0.3

5

0.05

100

80

60

40

0.2

IC, COLLECTOR CURRENT (A)

Figure 7. Temperature Coefficients

20

0.7

1

3

2

0.5

25

°C

TJ = 150°C

−55

°C

2

0.05

IC, COLLECTOR CURRENT (A)

5

1.6

1.2

0.8

0.4

0

3

2

0.07

0.2

0.1

0.5

0.3

1

0.7

TJ = 25°C

NPN

MJD200

PNP

MJD210

VCE = 1 V

VCE = 2 V

5

0.05

3

200

400

100

80

60

40

20

25

°C

TJ = 150°C

−55

°C

VCE = 1 V

VCE = 2 V

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1 V

qVC for VCE(sat)

qVB for VBE

2

0.05

1.6

1.2

0.8

0.4

0

3

2

0.07

0.2

0.1

0.5

0.3

1

0.7

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1 V

+2.5

+2

+1.5

+1

0

−0.5

−1

−1.5

−2

+0.5

−2.5

0.07 0.1

0.3

5

0.05

0.2

0.7

1

3

2

0.5

*APPLIES FOR IC/IB ≤ hFE/3

25

°C to 150°C

−55

°C to 25°C

25

°C to 150°C

−55

°C to 25°C

+2.5

+2

+1.5

+1

0

−0.5

−1

−1.5

−2

+0.5

−2.5

0.07 0.1

0.3

5

0.05

0.2

0.7

1

3

2

0.5

5

0.07 0.1

0.3

0.2

0.7

1

2

0.5

*APPLIES FOR IC/IB ≤ hFE/3

*

qVC for VCE(sat)

qVB for VBE

25

°C to 150°C

−55

°C to 25°C

25

°C to 150°C

−55

°C to 25°C

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