© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 7

1

Publication Order Number:

MJD44H11/D

MJD44H11 (NPN)

MJD45H11 (PNP)

Preferred Device

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

(No Suffix)

Machine Model, C

u 400 V

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

80

Vdc

Emitter−Base Voltage

5

Vdc

Collector Current

− Continuous

− Peak

8

16

Adc

Total Power Dissipation

Derate above 25

°C

20

0.16

W

W/

°C

Total Power Dissipation (Note 1)

Derate above 25

°C

1.75

0.014

W

W/

°C

Operating and Storage Junction

Temperature Range

−55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

6.25

°C/W

Thermal Resistance, Junction−to−Ambient

(Note 1)

71.4

°C/W

Lead Temperature for Soldering

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS, 20 WATTS

DPAK−3

CASE 369D

STYLE 1

DPAK

CASE 369C

STYLE 1

MARKING

DIAGRAMS

Preferred devices are recommended choices for future use

and best overall value.

Y

= Year

WW

= Work Week

J4xH11

= Device Code

x = 4 or 5

G

= Pb−Free Package

1 2

3

4

YWW

J4

xH11G

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

1

2

3

4

YWW

J4

xH11G

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