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MJE180 Datasheet(PDF) 1 Page - ON Semiconductor |
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MJE180 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 9 1 Publication Order Number: MJE171/D MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171, MJE181 = 80 Vdc − MJE172, MJE182 • DC Current Gain − hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc • Current−Gain − Bandwidth Product − fT = 50 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakages − ICBO = 100 nA (Max) @ Rated VCB • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Machine Model, C Human Body Model, 3B • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Base Voltage MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 VCB 60 80 100 Vdc Collector−Emitter Voltage MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 VCEO 40 60 80 Vdc Emitter−Base Voltage VEB 7.0 Vdc Collector Current − Continuous − Peak IC 3.0 6.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 1.5 0.012 W W/ _C Total Power Dissipation @ TA = 25_C Derate above 25 _C PD 12.5 0.1 W W/ _C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 _C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−225AA CASE 77−09 STYLE 1 3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 − 60 − 80 VOLTS 12.5 WATTS 3 2 1 Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION http://onsemi.com MARKING DIAGRAM YWW JE1xxG Y = Year WW = Work Week JE1xx = Specific Device Code x = 70, 71, 72, 80, 81, or 82 G = Pb−Free Package |
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Similar Description - MJE180 |
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