MJE180 datasheet(1/6 Pages) ONSEMI

Part #	MJE180

Description	Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

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Manufacturer	ONSEMI [ON Semiconductor]

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January, 2006 − Rev. 9

1

Publication Order Number:

MJE171/D

MJE170, MJE171, MJE172

(PNP), MJE180, MJE181,

MJE182 (NPN)

Preferred Device

Complementary Plastic

Silicon Power Transistors

The MJE170/180 series is designed for low power audio amplifier

and low current, high speed switching applications.

Features

• Collector−Emitter Sustaining Voltage −

VCEO(sus) = 40 Vdc − MJE170, MJE180

= 60 Vdc − MJE171, MJE181

= 80 Vdc − MJE172, MJE182

• DC Current Gain −

hFE = 30 (Min) @ IC = 0.5 Adc

= 12 (Min) @ IC = 1.5 Adc

• Current−Gain − Bandwidth Product −

fT = 50 MHz (Min) @ IC = 100 mAdc

• Annular Construction for Low Leakages −

ICBO = 100 nA (Max) @ Rated VCB

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Machine Model, C

Human Body Model, 3B

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Base Voltage

MJE170, MJE180

MJE171, MJE181

MJE172, MJE182

VCB

60

80

100

Vdc

Collector−Emitter Voltage

MJE170, MJE180

MJE171, MJE181

MJE172, MJE182

VCEO

40

60

80

Vdc

Emitter−Base Voltage

VEB

7.0

Vdc

Collector Current

− Continuous

− Peak

IC

3.0

6.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

1.5

0.012

W

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

12.5

0.1

W

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to +150

_C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not normal

operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be

affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−225AA

CASE 77−09

STYLE 1

3 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

40 − 60 − 80 VOLTS

12.5 WATTS

3

2 1

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

YWW

JE1xxG

Y

= Year

WW

= Work Week

JE1xx

= Specific Device Code

x = 70, 71, 72, 80, 81, or 82

G

= Pb−Free Package

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