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MJE181G Datasheet(PDF) 4 Page - ON Semiconductor |
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MJE181G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) http://onsemi.com 4 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.01 30 2.0 5.0 0.1 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO Figure 5. MJE171, MJE172 500 ms 5.0ms dc 1.0 20 10 50 5.0 3.0 2.0 1.0 100 100 ms TJ = 150°C VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.01 Figure 6. MJE181, MJE182 MJE171 MJE172 0.02 0.05 0.2 0.5 30 20 10 50 5.0 3.0 2.0 1.0 100 10 2.0 5.0 0.1 1.0 0.02 0.05 0.2 0.5 70 100 ms 500 ms 5.0ms dc MJE181 MJE182 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TJ = 150°C 7.0 ACTIVE−REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor − average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) t 150°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperature, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10K IC, COLLECTOR CURRENT (AMPS) 10 5K 3K 2K 1K 500 300 200 100 50 Figure 7. Turn−Off Time 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 13 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts tf VR, REVERSE VOLTAGE (VOLTS) 10 50 70 100 30 Figure 8. Capacitance 50 20 10 5.0 3.0 2.0 1.0 0.5 0.7 TJ = 25°C Cib Cob NPN MJE181/182 PNP MJE171/172 PNP MJE171/MJE172 NPN MJE181/MJE182 20 30 7.0 |
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