www.ti.com

EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS

S0, S1

Input

50

Ω

300 k

Ω

7 V

1DE, 2DE

Input

50

Ω

300 k

Ω

7 V

300 k

Ω

300 k

Ω

7 V

7 V

A Input

B Input

7 V

Y or Z

Output

5

Ω

10 k

Ω

ABSOLUTE MAXIMUM RATINGS

SN65LVDS22

SN65LVDM22

SLLS315C – DECEMBER 1998 – REVISED JUNE 2002

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

UNIT

–0.5 V to 4 V

(DE, S0, S1)

–0.5 V to 6 V

Voltage range

(Y, Z, A, and B)

–0.5 V to 4 V

Class 3, A:12 kV, B:600 V

Electrostatic discharge

All pins

Class 3, A:5 kV, B:500 V

Continuous power dissipation

See Dissipation Rating Table

Storage temperature range

–65°C to 150°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.

(3)

Tested in accordance with MIL-STD-883C Method 3015.7.

3

Submit Documentation Feedback