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MJE13005G Datasheet(PDF) 4 Page - ON Semiconductor

Part # MJE13005G
Description  4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS ??75 WATTS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE13005G Datasheet(HTML) 4 Page - ON Semiconductor

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MJE13005
http://onsemi.com
4
trv
TIME
IC
VCE
90% IB1
tsv
ICPK
Vclamp
90% Vclamp
90% IC
10% Vclamp
10%
ICPK
2% IC
IB
tfi
tti
tc
Figure 7. Inductive Switching Measurements
Table 1. Typical Inductive Switching Performance
IC
AMP
TC
_C
tsv
ns
trv
ns
tfi
ns
tti
ns
tc
ns
2
25
100
600
900
70
110
100
240
80
130
180
320
3
25
100
650
950
60
100
140
330
60
100
200
350
4
25
100
550
850
70
110
160
350
100
160
220
390
NOTE: All Data recorded in the inductive Switching Circuit In Table 2.
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms
are
not
in
phase.
Therefore,
separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10−90% Vclamp
tfi = Current Fall Time, 90−10% IC
tti = Current Tail, 10−2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching
waveforms is shown in Figure 7 to aid in the visual identity
of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN−222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ] tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
°C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at 100_C.
Figure 8. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
tr
td @ VBE(off) = 5 V
0.02
0.01
1
0.5
0.2
IC, COLLECTOR CURRENT (AMP)
0.4
4
12
0.04
VCC = 125 V
IC/IB = 5
TJ = 25°C
0.2
0.05
0.1
0.1
Figure 9. Turn−Off Time
0.2
0.1
10
5
1
0.5
4
12
0.04
VCC = 125 V
IC/IB = 5
TJ = 25°C
0.2
0.3
0.5
0.1
2
ts
tf
RESISTIVE SWITCHING PERFORMANCE


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